DocumentCode :
2196633
Title :
A compact high power amplifier for handy phones
Author :
Camargo, E. ; Steinberg, R.M.
Author_Institution :
Fujitsu Compound Semicond. Inc., San Jose, CA, USA
fYear :
1994
fDate :
23-27 May 1994
Firstpage :
565
Abstract :
A compact high power amplifier module has been developed for operation within the 890 to 915 MHz band and intended for application on handy phones. The paper summarizes the design steps and the unique use of self resonating chip capacitors to increase the efficiency. The amplifier module delivers a saturated power of +36 dBm with 55% efficiency and 36 dB gain when operating from a supply voltage of 5.8 volts.<>
Keywords :
cordless telephone systems; mobile radio systems; power amplifiers; solid-state microwave circuits; ultra-high-frequency amplifiers; 36 dB; 5.8 V; 55 percent; 890 to 915 MHz; UHF; amplifier module; efficiency; handy phones; high power amplifier; saturated power; self resonating chip capacitors; supply voltage; Capacitors; Gain; High power amplifiers; Power amplifiers; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-1778-5
Type :
conf
DOI :
10.1109/MWSYM.1994.335484
Filename :
335484
Link To Document :
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