DocumentCode :
2196697
Title :
The use of automatic differentiation in advanced non-linear modelling of microwave active devices
Author :
Feldmann, Peter ; Cojocaru, Vicentiu I. ; Brazil, Thomas J.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Volume :
1
fYear :
1995
fDate :
24-27 Jul 1995
Firstpage :
221
Abstract :
We describe the use of a novel, flexible and highly modular simulation environment called Sframe, in microwave device modelling and circuit simulation. The software architecture of Sframe is based on object orientation, automatic differentiation and the use of off-the-shelf numerical codes. We present the first tests with the implementation of an advanced nonlinear GaAs FET model in Sframe. This general purpose model, introduces novel solutions, particularly with respect to the modelling of the gate charge, gate capacitances and the RF dispersion of the transconductance and output conductance. The use of automatic differentiation techniques and the modularity of Sframe, lead to very compact model codes, simplifies the implementation process and eliminates many common sources of error. DC and small-signal AC simulation tests have been successfully carried out and the results are shown for the case of a 0.5 μm GaAs MESFET
Keywords :
Schottky gate field effect transistors; circuit analysis computing; differentiation; electric admittance; equivalent circuits; microwave field effect transistors; object-oriented programming; programming environments; semiconductor device models; 0.5 micron; DC simulation tests; GaAs; III-V semiconductors; MESFET; RF dispersion; Sframe; automatic differentiation; gate capacitances; gate charge; general purpose model; microwave active devices; microwave circuit simulation; microwave device modelling; modular simulation environment; nonlinear GaAs FET model; nonlinear modelling; object orientation; off-the-shelf numerical codes; output conductance; small-signal AC simulation tests; software architecture; transconductance; Capacitance; Circuit simulation; Circuit testing; Gallium arsenide; MESFETs; Microwave FETs; Microwave devices; Radio frequency; Software architecture; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-2674-1
Type :
conf
DOI :
10.1109/SBMOMO.1995.509624
Filename :
509624
Link To Document :
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