Title :
A super low noise V-band AlInAs/InGaAs HEMT processed by selective wet gate recess etching
Author :
Yoshida, N. ; Kitano, T. ; Yamamoto, Y. ; Katoh, K. ; Minami, H. ; Takano, H. ; Sonoda, T. ; Takamiya, S. ; Mitsui, S.
Author_Institution :
Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Itami, Japan
Abstract :
A 0.15 /spl mu/m T-shaped gate AlInAs/InGaAs high electron mobility transistor (HEMT) with excellent RF performances has been developed using a selective wet gate recess etching. An extremely low minimum noise figure (Fmin) of 0.9 dB with an associated gain (Ga) of 7.0 dB has been achieved at 60 GHz for a SiON-passivated device. This is the lowest value of Fmin ever reported for AlInAs/InGaAs HEMT with a passivation film.<>
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; high electron mobility transistors; indium compounds; passivation; semiconductor device noise; solid-state microwave devices; 0.15 micron; 0.9 dB; 60 GHz; 7 dB; AlInAs-InGaAs; EHF; HEMT; InGaAs; MM-wave device; RF performance; SiON; SiON-passivated device; T-shaped gate; V-band; high electron mobility transistor; passivation film; selective wet gate recess etching; super low noise device; HEMTs; Indium gallium arsenide; MODFETs; Noise figure; Passivation; Radio frequency; Wet etching;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335506
