DocumentCode
2197033
Title
A high power Q-band GaAs pseudomorphic HEMT monolithic amplifier
Author
Boulais, W. ; Donahue, R.S. ; Platzker, A. ; Huang, J. ; Aucoin, L. ; Shanfield, S. ; Vafiades, M.
Author_Institution
Equipment Div., Raytheon Co., Wayland, MA, USA
fYear
1994
fDate
23-27 May 1994
Firstpage
649
Abstract
A first-pass, three stage monolithic GaAs pseudomorphic HEMT power amplifier has been developed for use over the 40 GHz to 45 GHz band. The MMIC amplifier delivers 500 to 725 mW at the one dB gain compression point. The associated power gain is 10 to 11 dB and the power added efficiency is 10 to 17%. Potential applications for this work include communication systems and phased array radars.<>
Keywords
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; microwave amplifiers; power amplifiers; 10 to 11 dB; 10 to 17 percent; 40 to 45 GHz; 500 to 725 mW; GaAs; HEMT monolithic amplifier; MIMIC; MM-wave IC; MMIC amplifier; Q-band; high power operation; power amplifier; pseudomorphic HEMT; three stage type; Gain; Gallium arsenide; High power amplifiers; MMICs; PHEMTs; Phased arrays; Power amplifiers; Radar applications;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335507
Filename
335507
Link To Document