Title :
1.5 watts V-band power amplifier using PHEMT technology
Author :
Marosi, L. ; Yamauchi, D. ; Goel, J. ; Onak, G. ; Stones, D.I. ; Sharma, A. ; Tan, K. ; Brunner, B. ; Mancini, J.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
A millimeter wave power amplifier has been developed using a power MMIC based on 0.15 micron T gate pseudomorphic HEMT technology. A basic building block power module with 800 mW of output power has been demonstrated which covers 59.5 to 63.5 GHz. Two such modules have been power combined to achieve 1.5 watt output power level with more than 20.0 dB linear gain. This is the highest V-band power reported in the literature to date. With the demonstration of the low loss power combining schemes and the basic building block power module, levels of up to 10.0 watts can be easily achieved by using a higher order of combining.<>
Keywords :
MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; power amplifiers; power integrated circuits; 0.15 micron; 1.5 W; 20 dB; 59.5 to 63.5 GHz; 800 mW; EHF; MIMIC; MM-wave IC; T-gate pseudomorphic HEMT technology; V-band; low loss power combining schemes; millimeter wave power amplifier; power MMIC; power amplifier; power module; Gain; MMICs; Millimeter wave technology; Multichip modules; PHEMTs; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335508
