Title :
20 W linear, high efficiency internally matched HBT at 7.5 GHz
Author :
Ikalainen, P.K. ; Shou-Kong Fan ; Khatibzadeh, M.I.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
An internally matched HBT has been developed for use in communications systems. An output power of 20 W with 6.5 dB gain and 40% PAE at 7.5 GHz was achieved. Over the 7.25 to 7.75 GHz band minimum output power was 16.5 W with minimum 38% PAE. Two tone testing showed good linearity.<>
Keywords :
heterojunction bipolar transistors; impedance matching; power transistors; solid-state microwave devices; 16.5 to 20 W; 38 to 40 percent; 6.5 dB; 7.25 to 7.75 GHz; 7.5 GHz; SHF; communications systems applications; device linearity; high efficiency device; internally matched HBT; two tone testing; Gain; Heterojunction bipolar transistors; Linearity; Power generation; Testing;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335515
