Title :
Power PHEMT module delivers 12 watts, 40% P.A.E. over the 8.5 to 10.5 GHz band
Author :
Kraemer, B. ; Basset, R. ; Chye, P. ; Ding Day ; Wei, J.
Author_Institution :
Avantek Inc., Santa Clara, CA, USA
Abstract :
This paper describes performance of power PHEMT technology at X-band. Power PHEMT modules are shown to deliver an average output power of 12.3 watts and an average power-added efficiency (P.A.E.) of 40.8% over the 8.5 to 10.5 GHz frequency range for a 5 module sample size. Data is shown in statistical format. Peak module performance of 13.2 watts output power and 46.1% P.A.E. within the 8.5 to 10.5 GHz band is also presented. These results show an improvement in P.A.E. of 5 to 10% over MESFET technology previously presented at X-band.<>
Keywords :
MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; modules; power amplifiers; power integrated circuits; power transistors; 12.3 to 13.2 W; 40.8 to 46.1 percent; 8.5 to 10.5 GHz; PHEMT module; SHF; X-band; power PHEMT technology; power-added efficiency; pseudomorphic HEMT; Frequency; MESFETs; PHEMTs; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335516
