Title :
Optimization of a MESFET RF power amplifier using a bias dependent large signal MESFET model
Author :
Muñoz, S. ; Sebastián, J.L.
Author_Institution :
Dept. de Fisica Aplicada III, Univ. Complutense de Madrid, Spain
Abstract :
A large signal quasistatic MESFET model with bias dependent elements is derived from both experimental S parameters and DC measurements. As an application, this model is used in the design of a MESFET power amplifier. The analysis and gain optimization of the amplifier is performed using the describing function technique. Maximum gain is obtained by the determination of the optimum bias device conditions. The experimental results show excellent agreement with the CAD simulation
Keywords :
S-parameters; circuit analysis computing; circuit optimisation; describing functions; microwave power amplifiers; nonlinear network analysis; power amplifiers; radiofrequency amplifiers; semiconductor device models; CAD simulation; DC measurements; MESFET RF power amplifier; describing function; experimental S parameter measurement; experimental results; gain optimization; microwave design; optimization; optimum device bias conditions; Circuit simulation; Electrical resistance measurement; Equivalent circuits; MESFETs; Power amplifiers; Predictive models; RF signals; Radio frequency; Radiofrequency amplifiers; Scattering parameters;
Conference_Titel :
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-2674-1
DOI :
10.1109/SBMOMO.1995.509648
