The study of p-type material based on Sn-rich Mg2Si-Mg2Sn solid solution

Author

Isachenko, G.N. ; Zaitsev, V.K. ; Fedorov, M.I. ; Gurieva, E.A. ; Eremin, I.S. ; Konstantinov, P.P. ; Vedernikov, M.V.

Author_Institution

A.F. Ioffe Phys. Tech. Inst., St. Petersburg

fYear

2007

fDate

3-7 June 2007

Firstpage

248

Lastpage

250

Abstract

In this paper the results of the study of transport properties of some Mg₂Si_xSn_1-x solid solutions are presented. The samples of various composition (Mg₂Si_xSn_1-x, x = 0.25-0.4) and of wide range of hole concentration (up to 5 10²⁰ cm^-3) have been prepared. Temperature dependences of Seebeck and Hall coefficients and electrical conductivity have been measured in the range from 80 up to 800 K. The parameters of band structure and conduction mechanism (energy gap, hole mobility and effective mass and the ratio of electron mobility to that of holes) were determined from these measurements. The features of band structure and conduction mechanism are discussed.

Keywords

Hall effect; Seebeck effect; effective mass; electrical conductivity; electron mobility; energy gap; hole density; hole mobility; magnesium compounds; Hall coefficient; Mg₂Si-Mg₂Sn; Seebeck coefficient; band structure; conduction mechanism; effective mass; electrical conductivity; electron mobility; energy gap; hole concentration; hole mobility; solid solutions; temperature 80 K to 800 K; Charge carrier processes; Conducting materials; Conductivity measurement; Effective mass; Electric variables measurement; Electron mobility; Solids; Temperature dependence; Temperature distribution; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2007. ICT 2007. 26th International Conference on

Conference_Location

Jeju Island

ISSN

1094-2734

Print_ISBN

978-1-4244-2262-3

Electronic_ISBN

1094-2734

Type

conf

DOI

10.1109/ICT.2007.4569471

Filename

4569471