Title :
Transport parameters of single crystalline SiC for self-cooling device
Author :
Fukuda, S. ; Kato, T. ; Okamoto, Y. ; Kitagawa, H. ; Hamabe, Makoto ; Yamaguchi, S.
Author_Institution :
Dept. of Electr. Eng., Chubu Univ., Kasugai
Abstract :
Cooling is important to keep the temperatures of the highly integrated silicon electronic devices and power devices e.g. power MOSFET, IGBT. Yamaguchi et al. have proposed a new scheme to cool down the devices by its own current named ldquoself-cooling devicerdquo, in which the cooling process uses Peltier effect. In the proposed scheme, we should use the materials that have high thermal conductivity, high Seebeck coefficient and low electrical resistivity. These requirements are different from the conventional Peltier materialspsila. SiC is one of the candidate materials, and we measured the electrical resistivity, the Seebeck coefficient and the thermal conductivity of single-crystalline 4H-SiC in the temperature of 300 K - 400 K. We also evaluated the performance of the proposed cooling for the present power MOSFET by using the experimental data, and discuss the direction of the future study.
Keywords :
Peltier effect; Seebeck effect; insulated gate bipolar transistors; power MOSFET; silicon compounds; thermal conductivity; wide band gap semiconductors; IGBT; Peltier effect; Seebeck coefficient; SiC; power MOSFET; self-cooling device; single crystalline; thermal conductivity; Conducting materials; Crystallization; Electric resistance; Electronics cooling; MOSFET circuits; Power MOSFET; Silicon carbide; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Thermoelectrics, 2007. ICT 2007. 26th International Conference on
Conference_Location :
Jeju Island
Print_ISBN :
978-1-4244-2262-3
Electronic_ISBN :
1094-2734
DOI :
10.1109/ICT.2007.4569477