Design translation of an X-band multifunction PHEMT MMIC

Author

Yau, W. ; Kanber, H. ; Wu, C.S. ; Paine, B.M. ; Bar, S. ; Bardai, Z. ; Janesch, S. ; Kaputa, D. ; Fabian, W.

Author_Institution

Hughes Gallium Arsenide Operations, Torrance, CA, USA

fYear

1994

fDate

23-27 May 1994

Firstpage

1155

Abstract

Design translation is demonstrated at X-Band utilizing a multifunction MMIC as a test vehicle. The MMIC circuit consisting of a switch, LNA and attenuator is fabricated using PHEMT materials at two different GaAs foundries (Hughes and Martin Marietta, formally GE). The circuits demonstrated reproducible performance without compromising RF yield. The excellent performance: a noise figure as low as 1.1 dB and a gain of over 17 dB at 10 GHz was obtained with only very minor design translation. The results are believed to be the first ever reported on MMIC design translation using PHEMT materials.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; network synthesis; semiconductor switches; 10 GHz; 17 dB; GaAs; GaAs foundries; LNA; MMIC circuit; MMIC design translation; PHEMT materials; RF yield; X-band multifunction PHEMT MMIC; attenuator i; design translation; multifunction MMIC; noise figure; reproducible performance; switch; test vehicle; Attenuators; Circuit testing; Foundries; Gallium arsenide; MMICs; PHEMTs; Radio frequency; Switches; Switching circuits; Vehicles;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335549

Filename

335549