Low-noise performance of SiGe heterojunction bipolar transistors

Author

Schumacher, H. ; Erben, U. ; Gruhle, A.

Author_Institution

Dept. of Electron Devices, Ulm Univ., Germany

fYear

1994

fDate

23-27 May 1994

Firstpage

1167

Abstract

We have demonstrated, for the first time, a microwave noise figure below 1 dB at 10 GHz from a heterojunction bipolar transistor. The current and frequency dependence of the results obtained agree with the well-established Hawkins theory for bipolar transistor noise performance. An enhanced equivalent noise circuit including major parasitics provides valuable insight for the optimization of these devices for low-noise operation. Typical applications may include integrated RF front-ends where low-noise amplification is desired in addition to low phase-noise oscillation and mixing which typically benefit from bipolar devices.<>

Keywords

Ge-Si alloys; III-V semiconductors; germanium alloys; heterojunction bipolar transistors; semiconductor device noise; silicon alloys; solid-state microwave devices; 10 GHz; Hawkins theory; RF front-ends; SiGe; SiGe heterojunction bipolar transistors; bipolar devices; bipolar transistor noise performance; current dependence; enhanced equivalent noise circuit; frequency dependence; low phase-noise oscillation; low-noise amplification; low-noise operation; low-noise performance; major parasitics; microwave noise figure; mixing; optimization; Bipolar transistors; Circuits; Frequency dependence; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; Noise figure; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335552

Filename

335552