Simulation and analysis of the breakdown mechanism and characteristics of super junction structure

Author

Liang, Bei ; Yang, Fa-shun ; Ding, Zhao ; Fu, Xing-hua

Author_Institution

Coll. of Sci., Guizhou Univ., Guiyang, China

fYear

2011

fDate

9-11 Sept. 2011

Firstpage

467

Lastpage

470

Abstract

The device simulation tool-Atlas under Silvaco is used to simulate the electric field and its variation with bias of a super junction diode under the condition of breakdown, the breakdown mechanism of super junction structure is explained by the distribution of electric field. Other key parameters which could affect the breakdown characteristics are analyzed, such as the width of P pillar and N pillar, the variation of doping.

Keywords

electric fields; electronic design automation; power semiconductor diodes; semiconductor device breakdown; Atlas tool; breakdown characteristics; breakdown mechanism analysis; breakdown mechanism simulation; device simulation tool; electric field distribution; electric field simulation; semiconductor power device; super junction diode; super junction structure; Analytical models; Doping; Educational institutions; Electric breakdown; Electric fields; Epitaxial layers; Junctions; balance of charge; distribution of electric field; semiconductor power devices; super junction;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Control (ICECC), 2011 International Conference on

Conference_Location

Zhejiang

Print_ISBN

978-1-4577-0320-1

Type

conf

DOI

10.1109/ICECC.2011.6067820

Filename

6067820