Title :
Simulation and analysis of the breakdown mechanism and characteristics of super junction structure
Author :
Liang, Bei ; Yang, Fa-shun ; Ding, Zhao ; Fu, Xing-hua
Author_Institution :
Coll. of Sci., Guizhou Univ., Guiyang, China
Abstract :
The device simulation tool-Atlas under Silvaco is used to simulate the electric field and its variation with bias of a super junction diode under the condition of breakdown, the breakdown mechanism of super junction structure is explained by the distribution of electric field. Other key parameters which could affect the breakdown characteristics are analyzed, such as the width of P pillar and N pillar, the variation of doping.
Keywords :
electric fields; electronic design automation; power semiconductor diodes; semiconductor device breakdown; Atlas tool; breakdown characteristics; breakdown mechanism analysis; breakdown mechanism simulation; device simulation tool; electric field distribution; electric field simulation; semiconductor power device; super junction diode; super junction structure; Analytical models; Doping; Educational institutions; Electric breakdown; Electric fields; Epitaxial layers; Junctions; balance of charge; distribution of electric field; semiconductor power devices; super junction;
Conference_Titel :
Electronics, Communications and Control (ICECC), 2011 International Conference on
Conference_Location :
Zhejiang
Print_ISBN :
978-1-4577-0320-1
DOI :
10.1109/ICECC.2011.6067820
