Title :
A low noise, high gain Q-band monolithic HEMT receiver
Author :
Aust, M.V. ; Allen, B. ; Dow, G.S. ; Kasody, R. ; Biedenbender, M. ; Wang, N.
Author_Institution :
Space & Technol. Group, TRW Inc., Redondo Beach, CA, USA
Abstract :
A fully integrated MMIC receiver for Q-band was designed and fabricated using a 0.2 /spl mu/m pseudomorphic InGaAs HEMT technology process. This incorporates 3 microcells into a single macrocell. It contains a front end LNA which consists of a four stage balanced HEMT amplifier, a double-balanced HEMT diode mixer, and a 2 stage HEMT IF amplifier. This forms a highly compact millimeter MMIC receiver. Better than 30 dB conversion gain with a noise figure of 3.5 dB for the downconverter is achieved. This chip operates from a +3 Vdc and draws 85 mA. Total chip size is 5.0 mmx3.0 mm.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; indium compounds; microwave amplifiers; microwave integrated circuits; mixers (circuits); receivers; 0.2 /spl mu/m pseudomorphic InGaAs HEMT technology process; 0.2 mum; 2 stage HEMT IF amplifier; 3 mm; 30 dB; 5 mm; 85 mA; InGaAs; Q-band; conversion gain; double-balanced HEMT diode mixer; downconverter; four stage balanced HEMT amplifier; front end LNA; fully integrated MMIC receiver; highly compact millimeter MMIC receiver; low noise high gain Q-band monolithic HEMT receiver; macrocell; microcells; noise figure; total chip size; Diodes; Gain; HEMTs; Indium gallium arsenide; MMICs; Macrocell networks; Microcell networks; Noise figure;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335553
