Surface and gas phase reactions for fluorocarbon plasma etching of Si and SiO/sub 2/

Summary form only given. The reaction mechanism for fluorocarbon etching of SiO/sub 2/ involves simultaneous deposition of a polymer layer and consumption of the polymer layer by the etch process. The etching kinetics (rate and selectivity) strongly depend on the thickness of the polymeric passivation layer. The gas phase plasma properties in turn also depend on the surface kinetics through the recycling of plasma generated species on the surface. To investigate the coupling of gas phase plasma chemistry and surface kinetics, reaction mechanisms for Si/SiO/sub 2/ etching by Ar/C/sub 2/F/sub 6/ inductively and capacitively coupled plasmas have been developed and employed in an integrated plasma equipment model. The model accounts for both plasma and surface chemistry, and is linked to a feature profile model.