DocumentCode
2198291
Title
A new large signal HBT model
Author
Zhang, Q.M. ; Hu, J. ; Sitch, J. ; Surridge, R.K. ; Xu, J.M.
Author_Institution
Bell-Northern Res., Ottawa, Ont., Canada
fYear
1994
fDate
23-27 May 1994
Firstpage
1253
Abstract
A new large-signal HBT model has been developed and implemented in SPICE. With inclusion of several effects which are important for HBT operations and use of a proper extraction procedure for model parameters, excellent agreement between the modeled and measured device performance has been achieved over a wide range of operating conditions.<>
Keywords
SPICE; heterojunction bipolar transistors; semiconductor device models; SPICE; large signal HBT model; parameter extraction; Heterojunction bipolar transistors; SPICE;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335575
Filename
335575
Link To Document