Title :
Feasibility of employing an I/sub DDQ/ output amplifier in deep submicron built-in current sensors
Author :
Athan, S.P. ; Landis, D.L.
Author_Institution :
Center for Microelectron. Res., Univ. of South Florida, Tampa, FL, USA
Abstract :
The feasibility of employing an I/sub DDQ/ output MOSFET amplifier in deep submicron CMOS ICs is evaluated. CUT performance is evaluated to determine the impact due to process scaling in the deep submicron regime. Comparisons of area overhead are made between BICS designs with and without the use of an output amplifier.
Keywords :
CMOS integrated circuits; amplifiers; electric current measurement; electric sensing devices; integrated circuit testing; BICS design; IDDQ output amplifier; MOSFET amplifier; area overhead; built-in current sensor; deep submicron CMOS IC; Circuit faults; Circuit testing; Degradation; Diodes; MOSFET circuits; Monitoring; Propagation delay; Sensor phenomena and characterization; Silicon; Voltage;
Conference_Titel :
IDDQ Testing, 1996., IEEE International Workshop on
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-8186-7655-8
DOI :
10.1109/IDDQ.1996.557822
