DocumentCode
2198648
Title
Carrier recombination in single and double heterojunction bipolar transistors
Author
Spiegel, Solon Jose
Author_Institution
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Volume
2
fYear
1995
fDate
24-27 Jul 1995
Firstpage
773
Abstract
Carrier recombination in single and double abrupt bipolar transistors (HBTs) is analysed. The numerical results performed on InP based structures show that the recombination rate in the neutral base of double abrupt HBTs is higher than in single abrupt HBTs owing to the electron confinement in the base region
Keywords
III-V semiconductors; carrier density; heterojunction bipolar transistors; hole density; indium compounds; thermionic electron emission; HBT; III-V semiconductors; InP; base region; carrier recombination; double heterojunction bipolar transistors; electron concentration; electron confinement; hole concentration; numerical results; recombination rate; single heterojunction bipolar transistors; Carrier confinement; Charge carrier processes; Double heterojunction bipolar transistors; Electron mobility; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Poisson equations; Spontaneous emission; Thermionic emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
Conference_Location
Rio de Janeiro
Print_ISBN
0-7803-2674-1
Type
conf
DOI
10.1109/SBMOMO.1995.509713
Filename
509713
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