DocumentCode
2199240
Title
Heterojunction bipolar transistors under illumination: theory and experiment
Author
De Barros, L.E.M. ; Paolella, A. ; Herczfeld, P.
Author_Institution
Center for Microwave/Lightwave Technol., Drexel Univ., Philadelphia, PA, USA
Volume
2
fYear
1995
fDate
24-27 Jul 1995
Firstpage
920
Abstract
A new model for the HBT has been developed which solves for the electrical and photogenerated currents in the base, emitter, and collector. The model accounts for the discontinuity in the quasi-fermi level by defining an effective carrier interface velocity. Experimental and theoretical curves relating to the device behavior are presented and compared
Keywords
Fermi level; carrier mobility; heterojunction bipolar transistors; photodetectors; semiconductor device models; HBT; base; collector; device behavior; discontinuity; effective carrier interface velocity; emitter; heterojunction bipolar transistors; illumination; photogenerated currents; quasi-fermi level; Current density; Energy consumption; Frequency response; Heterojunction bipolar transistors; Lighting; Microwave devices; Microwave theory and techniques; Optical receivers; Photoconductivity; Poisson equations;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
Conference_Location
Rio de Janeiro
Print_ISBN
0-7803-2674-1
Type
conf
DOI
10.1109/SBMOMO.1995.509738
Filename
509738
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