DocumentCode
2199349
Title
Displacement effects induced by high energy protons in semiconductor electronic devices
Author
Buisson, J. ; Gaillard, R. ; Jaureguy, J.-C. ; Poirault, G.
Author_Institution
CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
fYear
1995
fDate
18-22 Sep 1995
Firstpage
19
Lastpage
24
Abstract
Degradation coefficients of semiconductor devices irradiated by high energy protons (10 MeV to 800 MeV) at Saturne and Van de Graaf facilities are measured and compared to the NIEL curve of protons in silicon. PIN dosimetry detector´s direct voltage variation is modeled by using a device simulator code and the origin of the direct voltage variation with the fluence is clearly identified
Keywords
proton effects; semiconductor device models; semiconductor device reliability; 10 to 800 MeV; NIEL curve; PIN dosimetry detector; Saturne; Si; Van de Graaf facilities; degradation coefficients; device simulator code; direct voltage variation; displacement effects; fluence; high energy protons; semiconductor electronic devices; Degradation; Diodes; Dissolved gas analysis; Neutrons; OFDM modulation; Protons; Resumes; Satellites; Synchrocyclotrons; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location
Arcachon
Print_ISBN
0-7803-3093-5
Type
conf
DOI
10.1109/RADECS.1995.509745
Filename
509745
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