DocumentCode :
2199395
Title :
On-chip EMC issue: the implementation of patterned ground shields for silicon devices
Author :
Yin, Wen-Yan
Author_Institution :
Centre for Microwave and RF Technologies, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
fYear :
2007
fDate :
24-28 Sept. 2007
Firstpage :
9
Lastpage :
12
Abstract :
This paper addresses some on-chip EMC issues for reducing power dissipation in the design of passive silicon-based devices operating at high frequencies. It is demonstrated that the implementation of patterned ground shields (PGS) together with differential technique can enhance the performance of spiral inductors, spiral transformers, and other devices effectively, which is compatible with standard CMOS fabrication technologies. However, the shielding effectiveness of a PGS is very sensitive to its embedding depth which should be chosen carefully. Some numerical results will be shown to demonstrate inductive couplings in various PGS inductors and transformers but are suppressed here.
Keywords :
CMOS technology; Electromagnetic compatibility; Electromagnetic shielding; Electromagnetic waveguides; Frequency; Inductors; Q factor; Silicon devices; Spirals; Transformers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility, 2007. EMC Zurich 2007. 18th International Zurich Symposium on
Conference_Location :
Munich, Germany
Print_ISBN :
978-3-9523286-1-3
Electronic_ISBN :
978-3-9523286-0-6
Type :
conf
DOI :
10.1109/EMCZUR.2007.4388183
Filename :
4388183
Link To Document :
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