Title :
Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses
Author :
Emelianov, V.V. ; Zebrev, G.I. ; Ulimov, V.N. ; Useinov, R.G. ; Belyakov, V.V. ; Pershenkov, V.S.
Author_Institution :
Res. Inst. of Sci. Instrum., Moscow, Russia
Abstract :
The postirradiation response of n-channel MOSTs during thermal and electrical stresses is investigated. It is found that reversible positive charge annealing plays a key role in the postirradiation response of MOSTs. A mathematical model of reversible charge relaxation processes is suggested
Keywords :
MOSFET; annealing; charge relaxation; electrical stress; n-channel MOS transistor; postirradiation response; reversible positive charge annealing; thermal stress; Annealing; Electron traps; Instruments; MOSFETs; Mathematical model; Temperature; Thermal stresses; Thermoelectric devices; Thermoelectricity; Threshold voltage;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509752
