Title :
Post-irradiation effects in a rad-hard technology
Author :
Chabrerie, Christian ; Musseau, Olivier ; Flament, Olivier ; Leray, Jean-Luc ; Boudenot, Jean-Claude ; Shipman, Benoît ; Callewaert, Hervé
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
Abstract :
We studied radiation and post-irradiation effects in a CMOS rad-hard technology. The physical properties of charge detrapping in the gate oxide, investigated by isothermal and isochronal annealings, are dependent on the experimental procedure (bias, time storage, temperature, dose level)
Keywords :
CMOS integrated circuits; annealing; integrated circuit measurement; radiation hardening (electronics); CMOS; charge detrapping; dose level; gate oxide; isochronal annealing; isothermal annealing; post-irradiation effects; rad-hard technology; time storage; Annealing; CMOS technology; Degradation; Isothermal processes; Radiation hardening; Silicon on insulator technology; Space technology; Temperature dependence; Testing; Threshold voltage;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509763
