• DocumentCode
    2199871
  • Title

    A radiation tolerant 0.6 μm CMOS technology

  • Author

    Lasserre, V. ; Corbière, T. ; Thomas, B. ; Rödde, K.

  • Author_Institution
    MATRA MHS, Nantes, France
  • fYear
    1995
  • fDate
    18-22 Sep 1995
  • Firstpage
    125
  • Lastpage
    130
  • Abstract
    Modifications of the standard fabrication techniques of the 0.6 μm CMOS technology lead to a radiation tolerant process in terms of immunity to total dose effects (up to 500 Gy) and to latchup under heavy ions (LET up to 100 MeV/(mg/cm2)). In this paper, the process development and the evolution of device parameters as a function of total dose are presented
  • Keywords
    CMOS integrated circuits; gamma-ray effects; integrated circuit technology; ion beam effects; radiation hardening (electronics); 0.6 micron; 500 Gy; CMOS technology; IC fabrication; LET; heavy ion irradiation; latchup; radiation tolerance; total dose; CMOS process; CMOS technology; Fabrication; Flowcharts; Isolation technology; MOS devices; MOSFETs; Military standards; Space technology; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
  • Conference_Location
    Arcachon
  • Print_ISBN
    0-7803-3093-5
  • Type

    conf

  • DOI
    10.1109/RADECS.1995.509764
  • Filename
    509764
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2199871