DocumentCode :
2200031
Title :
Impact of leakage and short circuit current in rush current analysis of power gated domains
Author :
Sreekumar, V. ; Ravichandran, S.
Author_Institution :
IC Design, Cadence Design Syst., Inc., Bangalore, India
fYear :
2010
fDate :
18-21 March 2010
Firstpage :
41
Lastpage :
44
Abstract :
Power shut off being a key technique for power reduction in today´s designs, it is critical to be able to verify circuit behavior when it is powered from an off state to an on state. The total rush current and turn-on time of the module can be impacted by the high short circuit current caused by slow signal slew rates and the leakage current of the module. In this paper, we present a study on how these effects impact the overall analysis and how they can be accounted for during a power-up analysis. The analysis has been done on ARM 968 processor based Wireless LAN IC.
Keywords :
integrated circuit modelling; integrated logic circuits; leakage currents; logic gates; short-circuit currents; ARM 968 processor; leakage; power gated domains; power reduction; power-up analysis; rush current analysis; short circuit current; wireless LAN IC; Circuit simulation; Logic devices; Performance analysis; Power system simulation; Power system transients; Short circuit currents; Switches; Switching circuits; Turning; Wireless LAN;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE SoutheastCon 2010 (SoutheastCon), Proceedings of the
Conference_Location :
Concord, NC
Print_ISBN :
978-1-4244-5854-7
Type :
conf
DOI :
10.1109/SECON.2010.5453925
Filename :
5453925
Link To Document :
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