Title :
Gamma radiation effects on bipolar transistors a comparison of surface mount and standard packages
Author :
Pater, S.L. ; Sharp, R.E.
Author_Institution :
AEA Technol., Didcot, UK
Abstract :
Gamma radiation total dose effects on unbiased bipolar transistors in both surface mount and standard packages have been assessed. Total doses of up to 1 MGy have been covered at a dose rate of 12.6 kGy[H2O]/hr, using a cobalt-60 source. No significant differences in the radiation effects between the two package styles were observed
Keywords :
bipolar transistors; gamma-ray effects; semiconductor device packaging; semiconductor device testing; surface mount technology; 1 kGy to 1 MGy; Co-60 source; breakdown voltage; dose rate; gamma radiation total dose effects; standard packages; surface mount packages; transistor testing; unbiased bipolar transistors; Bipolar transistors; Circuit testing; Electronic components; Electronics packaging; Gamma rays; Packaging machines; Physics; Power industry; Radiation effects; Silicon;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509772
