• DocumentCode
    2200073
  • Title

    Gamma radiation effects on bipolar transistors a comparison of surface mount and standard packages

  • Author

    Pater, S.L. ; Sharp, R.E.

  • Author_Institution
    AEA Technol., Didcot, UK
  • fYear
    1995
  • fDate
    18-22 Sep 1995
  • Firstpage
    165
  • Lastpage
    169
  • Abstract
    Gamma radiation total dose effects on unbiased bipolar transistors in both surface mount and standard packages have been assessed. Total doses of up to 1 MGy have been covered at a dose rate of 12.6 kGy[H2O]/hr, using a cobalt-60 source. No significant differences in the radiation effects between the two package styles were observed
  • Keywords
    bipolar transistors; gamma-ray effects; semiconductor device packaging; semiconductor device testing; surface mount technology; 1 kGy to 1 MGy; Co-60 source; breakdown voltage; dose rate; gamma radiation total dose effects; standard packages; surface mount packages; transistor testing; unbiased bipolar transistors; Bipolar transistors; Circuit testing; Electronic components; Electronics packaging; Gamma rays; Packaging machines; Physics; Power industry; Radiation effects; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
  • Conference_Location
    Arcachon
  • Print_ISBN
    0-7803-3093-5
  • Type

    conf

  • DOI
    10.1109/RADECS.1995.509772
  • Filename
    509772
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2200073