Title :
Using commercial semiconductor technologies in space
Author :
Johnston, A.H. ; Lee, C.I. ; Rax, B.G. ; Shaw, D.C.
Author_Institution :
California Inst. of Technol., Pasadena, CA, USA
Abstract :
New issues are discussed that must be considered when unhardened commercial technologies are used in space applications, as well as hardness assurance techniques. Large differences in dose-rate effects were observed for different circuit types from the same manufacturer, which may be due to differences in the thickness of isolation oxides used in processing. Data are presented for scaled MOS devices that show how total dose hardness and hard error rates are projected as devices are scaled to smaller feature size. Hard errors are expected to be a significant problem for devices with feature size below 0.6 μm
Keywords :
CMOS integrated circuits; bipolar integrated circuits; integrated circuit reliability; integrated circuit testing; isolation technology; radiation hardening (electronics); space vehicle electronics; 0.6 mum; CMOS circuits; bipolar technologies; commercial semiconductor technologies; dose-rate effects; feature size; hard error rates; hardness assurance techniques; isolation oxide thickness; scaled MOS devices; space environment; spacecraft electronics; total dose hardness; Circuit testing; Degradation; Error analysis; Isolation technology; Laboratories; Linear circuits; MOS devices; Manufacturing processes; Propulsion; Space technology;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509774
