Modeling of the pH-ChemFET response and using Genetic Algorithm as extraction parameters method

Author

Naimi, S.E. ; Hajji, B. ; Habbani, Y. ; Humenyuk, I. ; Launay, J. ; Temple-Boyer, P.

Author_Institution

Syst. et Dispositifs Micro-Nanoelectronique Team, Ecole Nat. des Sci. Appl., Oujda, Morocco

fYear

2011

fDate

May 30 2011-June 1 2011

Firstpage

103

Lastpage

106

Abstract

This paper deals with the modeling of the temperature behavior of the pH-ChemFET sensor by taking into account the dependence with temperature of the reference electrode, insulator/electrolyte interface, test samples and the semiconductor part of pH-ChemFETs. Thus, the relationship of the dissociation constants Ka, Kb, at the SiO₂/Si₃N₄/electrolyte interface, versus the temperature is simulated and the genetic algorithm is used as method for extraction and optimization of the main parameters of the pH-ChemFETs. The model developed is tested at different temperatures on large pH range, evidencing a good fit between simulation and experimental results.

Keywords

chemical sensors; dissociation; electrodes; electrolytes; field effect transistors; genetic algorithms; pH measurement; dissociation constants; extraction parameters method; genetic algorithm; insulator-electrolyte interface; pH-ChemFET response; reference electrode; Electric potential; Genetic algorithms; MOSFET circuits; Temperature; Temperature measurement; Temperature sensors; Threshold voltage; Genetic algorithm; Thermal modeling; pH-ChemFET Sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Faible Tension Faible Consommation (FTFC), 2011

Conference_Location

Marrakech

Print_ISBN

978-1-61284-646-0

Type

conf

DOI

10.1109/FTFC.2011.5948899

Filename

5948899