Title :
Fast techniques for MOSFET response prediction in space environments
Author :
Pershenkov, V.S. ; Belyakov, V.V. ; Popov, M.Y. ; Cherepko, S.V. ; Shvetzov-Shilovsky, I.N.
Author_Institution :
Moscow Eng. Phys. Inst., Russia
Abstract :
The theoretical and practical aspects of two techniques for low dose rate effects investigations in MOS circuits are discussed. The first technique is based on the use of linear response theory together with the conversion model of interface states formation. The cornerstone of the second technique is the radiation induced charge neutralization phenomenon under negative oxide electric field. The application of test techniques for circuit simulation and the extraction of SPICE model parameters is also discussed
Keywords :
MOSFET; SPICE; interface states; semiconductor device models; space vehicle electronics; MOSFET; SPICE; circuit simulation; conversion model; interface states; ionizing radiation; linear response theory; oxide electric field; radiation induced charge neutralization; space environment; Annealing; Circuit testing; Electron emission; Electron traps; Interface states; Laboratories; MOS devices; MOSFET circuits; Manufacturing; Temperature;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509776
