Title :
Radiation induced degradation in power MOSFETs
Author :
Bendada, E. ; de la Bardonnie, M. ; Mialhe, P. ; Charles, J.-P. ; Blampain, E. ; Hoffmann, A.
Author_Institution :
Centre d´´Etudes Fondamentals, Perpignan Univ., France
Abstract :
An innovative method for device characterization is experimented to determine the radiation response of power MOSFETs. The degradation of body-drain junction parameters by ionizing radiation depends on the total energy to which the material has been subjected
Keywords :
gamma-ray effects; power MOSFET; HEXFET; body-drain junction parameters; degradation; ionizing radiation response; power MOSFET; total energy; Business; Degradation; Diodes; Gold; MOSFET circuits; Optical polarization; Radiative recombination; Rectifiers; Resumes; Transconductance;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509780
