Title :
Total dose effects on elementary transistors of a comparator in bipolar technology
Author :
Bosc, J.M. ; Sarrabayrouse, G. ; Guerre, F.-X.
Author_Institution :
Motorola Toulouse, France
Abstract :
In the present work we investigate elementary transistors behaviour of an Integrated Circuit using junction isolation bipolar technology. Polarization conditions and dose rate effects on the main elementary transistor types are analysed. Furthermore, the IC electronic function degradations are studied. Finally, a comparison between the IC´s degradations and the elementary components ones is attempted
Keywords :
bipolar analogue integrated circuits; comparators (circuits); radiation hardening (electronics); IC electronic function degradation; comparator; junction isolation bipolar technology; linear integrated circuit; polarization; radiation response; total dose; transistor; Analog integrated circuits; Bipolar integrated circuits; Bipolar transistor circuits; Circuit testing; Degradation; Integrated circuit technology; Isolation technology; Polarization; Semiconductor device testing; Space technology;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509781
