DocumentCode
2200318
Title
Worst case irradiation on MOS components: implication on CMOS4000B technology total dose testing
Author
Gaudin, D. ; Boyer, J.M. ; Dayid, J.P. ; Vadrot, J.F.
Author_Institution
SGS-Thomson Microelectron., Rennes, France
fYear
1995
fDate
18-22 Sep 1995
Firstpage
237
Lastpage
243
Abstract
Electrical behaviour observation was performed on CMOS4000B technology transistors and devices during a Co60 irradiation. Radiation test method determination was based on oxide trapped charges and interface states evolution at different irradiation dose rates
Keywords
CMOS integrated circuits; MOSFET; gamma-ray effects; integrated circuit testing; interface states; semiconductor device testing; space vehicle electronics; CMOS4000B technology; electrical behaviour observation; gamma ray effects; interface states evolution; irradiation dose rates; oxide trapped charges; radiation test method determination; space equipment; total dose testing; worst case irradiation; Annealing; CMOS technology; Computer aided software engineering; Interface states; Inverters; MOS devices; MOSFETs; Space technology; Testing; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location
Arcachon
Print_ISBN
0-7803-3093-5
Type
conf
DOI
10.1109/RADECS.1995.509783
Filename
509783
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