Title :
Simulation of a New Type of Oxide Confined 850 nm VCSEL
Author :
Mitani, S.M. ; Alias, M.S. ; Choudhury, P.K.
Author_Institution :
Optoelectron. Devices Unit, Telekom R&D Sdn Bhd., Selangor
Abstract :
The VCSEL design presented in this paper can suitably be operated in the 850 nm region of the electromagnetic spectrum. The reflection mirrors are made of AlGaAs layers. A better confinement of light is achieved by the introduction of an oxide confinement layer. PIC3D software is used to finally obtain various relevant results that greatly affect the performance of the device; the paper reports a few of them
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor lasers; surface emitting lasers; 850 nm; AlGaAs; AlGaAs layers; VCSEL design; electromagnetic spectrum; reflection mirrors; Design engineering; Doping; Fabrication; Lattices; Optical arrays; Optoelectronic devices; Research and development; Software performance; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
TENCON 2006. 2006 IEEE Region 10 Conference
Conference_Location :
Hong Kong
Print_ISBN :
1-4244-0548-3
Electronic_ISBN :
1-4244-0549-1
DOI :
10.1109/TENCON.2006.344117
