DocumentCode :
2200395
Title :
Power MOSFETs hardened for single event effects (SEE) in space
Author :
Carley, Donald R. ; Wheatley, C. Frank ; Titus, Jeff L. ; Burton, Donald I.
Author_Institution :
Harris Semicond., Somerville, NJ, USA
fYear :
1995
fDate :
18-22 Sep 1995
Firstpage :
253
Lastpage :
257
Abstract :
Measurements are presented for the single event effects and total dose responses of the newly introduced Harris “FS” series of space hardened power MOSFETs. The hardness appears to offer a breakthrough for commercial space requirements
Keywords :
power MOSFET; radiation hardening (electronics); space vehicle electronics; Harris FS series; commercial space requirements; power MOSFETs; single event effects; space hardened devices; total dose responses; Cranes; Insulation; MOSFETs; Packaging; Plasma temperature; Power measurement; Radiation hardening; Road transportation; Voltage; Weapons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
Type :
conf
DOI :
10.1109/RADECS.1995.509786
Filename :
509786
Link To Document :
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