Total dose response of a U.H.F. complementary-bipolar process (C-bip) using dielectric isolation (DI/SOI)

Author

Mélotte, Michel

Author_Institution

Soc. de Microelectron., Charleroi, Belgium

fYear

1995

fDate

18-22 Sep 1995

Firstpage

278

Lastpage

283

Abstract

Fast analog signal processing in ionizing radiation environments is today a growing activity for our ASIC design company. To answer this need, we have tested the total-dose response, up to 30 kGy(Si) (3 Mrad(Si)), of the NPN and PNP transistors used in the DI-Cbip UHF process from Harris Semiconductor. Results show a common-emitter current gain (β) degradation of approximately 50% at usual current density. Degradation versus total dose exhibits saturation above 20 kGy(Si) at 36 mGy(Si)/s (3.6 rad(Si)/s)

Keywords

UHF integrated circuits; analogue processing circuits; application specific integrated circuits; bipolar analogue integrated circuits; gamma-ray effects; silicon-on-insulator; 0 to 30 kGy; ASIC design; C-bip; DI/SOI; UHF complementary-bipolar process; analog signal processing; common-emitter current gain; current density; dielectric isolation; gamma ray effects; ionizing radiation environments; saturation; total dose response; Application specific integrated circuits; Bipolar transistors; Degradation; Dielectric substrates; Isolation technology; Noise figure; Radio frequency; Resistors; Thin film transistors; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on

Conference_Location

Arcachon

Print_ISBN

0-7803-3093-5

Type

conf

DOI

10.1109/RADECS.1995.509790

Filename

509790