• DocumentCode
    2200605
  • Title

    ADC performance drift trade-off: a case study

  • Author

    Dautriche, P. ; Aubert, J.P. ; Vellou, D.

  • Author_Institution
    Semicond. Specifiques, Thomson-CSF, Saint Egreve, France
  • fYear
    1995
  • fDate
    18-22 Sep 1995
  • Firstpage
    310
  • Lastpage
    312
  • Abstract
    Characteristics of ADCs and performance drift under irradiation are often the critical points concerning the performance of equipment operating in hostile radiative environment. A presentation is given of the results obtained on 8 bit ADC manufactured in high speed bipolar technology (fT=8 GHz). A comparison between rad hard ADC and rad tolerant ADC is also presented in order to show the impact of technological choice on irradiation and electrical performances
  • Keywords
    analogue-digital conversion; bipolar integrated circuits; radiation effects; radiation hardening (electronics); 8 GHz; 8 bit; ADC performance drift; electrical performance; high speed bipolar technology; hostile radiative environment; irradiation; performance drift tradeoff; rad hard ADC; rad tolerant ADC; CMOS technology; Circuits; Computer aided software engineering; Frequency conversion; Spatial resolution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
  • Conference_Location
    Arcachon
  • Print_ISBN
    0-7803-3093-5
  • Type

    conf

  • DOI
    10.1109/RADECS.1995.509795
  • Filename
    509795