Title :
ADC performance drift trade-off: a case study
Author :
Dautriche, P. ; Aubert, J.P. ; Vellou, D.
Author_Institution :
Semicond. Specifiques, Thomson-CSF, Saint Egreve, France
Abstract :
Characteristics of ADCs and performance drift under irradiation are often the critical points concerning the performance of equipment operating in hostile radiative environment. A presentation is given of the results obtained on 8 bit ADC manufactured in high speed bipolar technology (fT=8 GHz). A comparison between rad hard ADC and rad tolerant ADC is also presented in order to show the impact of technological choice on irradiation and electrical performances
Keywords :
analogue-digital conversion; bipolar integrated circuits; radiation effects; radiation hardening (electronics); 8 GHz; 8 bit; ADC performance drift; electrical performance; high speed bipolar technology; hostile radiative environment; irradiation; performance drift tradeoff; rad hard ADC; rad tolerant ADC; CMOS technology; Circuits; Computer aided software engineering; Frequency conversion; Spatial resolution;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509795
