Title :
Experimental evidence of the temperature and angular dependence in SEGR [power MOSFETs]
Author :
Mouret, I. ; Calvet, M.-C. ; Calvel, P. ; Tastet, P. ; Allenspach, M. ; LaBel, K.A. ; Titu, J.L. ; Wheatley, C.F. ; Schrimpf, R.D. ; Galloway, K.F.
Author_Institution :
Motorola Semicond., Toulouse, France
Abstract :
The temperature and angular dependence of Single-Event Gate Rupture (SEGR) experiments show that a normal incident angle favors SEGR and elevated temperature is insignificant. Both the oxide and substrate response play a major role in determining the SEGR sensitivity of power MOSFETs
Keywords :
failure analysis; ion beam effects; power MOSFET; semiconductor device reliability; thermal analysis; SEGR sensitivity; angular dependence; elevated temperature; heavy ion strike; normal incident angle; oxide response; power DMOS transistor; power MOSFETs; single-event gate rupture; substrate response; temperature dependence; Breakdown voltage; Charge carrier processes; Cranes; Electrodes; MOSFET circuits; Neck; Power MOSFET; Temperature dependence; Temperature sensors; Testing;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509796
