Title :
Modification of single event upset cross section of an SRAM at high frequencies
Author :
Buchner, S. ; Campbell, A.B. ; McMorrow, D. ; Melinger, J. ; Masti, M. ; Chen, Y.J.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Single event upset cross sections exhibit a clock frequency dependence, the origins of which have been investigated in a CMOS SRAM, both with a pulsed laser synchronized to the operation of the circuit and with a circuit simulator modeling program
Keywords :
CMOS memory circuits; SRAM chips; circuit analysis computing; integrated circuit measurement; integrated circuit modelling; ion beam effects; timing; CMOS memory chip; SRAM; circuit simulator modeling program; clock frequency dependence; high frequencies; single event upset cross section; synchronised pulsed laser; Circuit simulation; Clocks; Discrete event simulation; Frequency dependence; Frequency synchronization; Laser modes; Optical pulses; Pulse circuits; Random access memory; Single event upset;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509798
