Single event damage effects in cryogenic CMOS microelectronics

Author

Pickel, James C.

Author_Institution

S-Cubed Div., Maxwell Labs., Mission Viejo, CA, USA

fYear

1995

fDate

18-22 Sep 1995

Firstpage

391

Lastpage

396

Abstract

Cryogenic microelectronics, as used in focal plane arrays in space-based optical sensors, are potentially vulnerable to single event damage effects from energetic heavy ions and protons. Results are presented for numerical simulation and analytical assessment of potential effects in generic FPAs. Present-generation FPAs are not likely to be affected by single event damage, but the potential will increase as minimum transistor size is made smaller

Keywords

CMOS integrated circuits; cryogenic electronics; focal planes; ion beam effects; proton effects; FPA; cryogenic CMOS microelectronics; focal plane array; heavy ions; numerical simulation; protons; single event damage; space-based optical sensor; CMOS integrated circuits; Cryogenics; Electron traps; MOSFET circuits; Microelectronics; Optical arrays; Optical sensors; Protons; Sensor arrays; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on

Conference_Location

Arcachon

Print_ISBN

0-7803-3093-5

Type

conf

DOI

10.1109/RADECS.1995.509808

Filename

509808

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2201026