Title :
A layout dependent and bias independent scalable substrate model for CMOS RF transistors
Author :
Suravarapu, Ravikanth ; Mayaram, Kartieya ; Shi, C. J Richard
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Abstract :
The dependence of the substrate resistance for MOS transistor RF modeling on biasing is studied from device simulations for a 0.5 μm CMOS process. Though the substrate resistance is found to be bias dependent, the error incurred by assuming a constant value equal to the DC resistance is not significant. A scalable model for the substrate resistance of multiple gate fingers is developed. This model is simple to extract and gives good agreement for the output admittance.
Keywords :
MOSFET; electric admittance; electric resistance; semiconductor device models; substrates; CMOS RF transistors; DC resistance; bias independent substrate model; biasing; device simulations; layout dependent substrate model; multiple gate fingers; output admittance; scalable substrate model; substrate resistance; CMOS process; Electrical resistance measurement; Fingers; Frequency measurement; Immune system; Joining processes; MOSFETs; Phase measurement; Radio frequency; Semiconductor device modeling;
Conference_Titel :
Radio and Wireless Conference, 2002. RAWCON 2002. IEEE
Print_ISBN :
0-7803-7458-4
DOI :
10.1109/RAWCON.2002.1030156
