DocumentCode
2202642
Title
Wafer-Level Encapsulation and Sealing of Electrostatic HARPSS Transducers
Author
Pourkamali, Siavash ; Ayazi, Farrokh
Author_Institution
Univ. of Denver, Denver
fYear
2007
fDate
28-31 Oct. 2007
Firstpage
49
Lastpage
52
Abstract
This paper reports on a thin-film wafer-level encapsulation technique for packaging and CMOS integration of MEMS sensors and actuators fabricated through the HARPSS process. This approach takes advantage of the stationary parts of the micromechanical device itself for encapsulation of its sensitive moving parts, and therefore can be performed without addition of extensive processing steps. Encapsulated high frequency capacitive silicon resonators are demonstrated using this technique. Reliability and performance tests conducted on the encapsulated resonators reveal a high level of hermeticity and reliability with minimal interference with device operation. This technique can be applied to a wide variety MEMS sensors and actuators. Silicon transducers encapsulated using this approach can run through the regular IC fabrication and/or packaging processes.
Keywords
electrostatic devices; encapsulation; microsensors; wafer level packaging; MEMS sensors; electrostatic HARPSS transducers; encapsulated resonators; high frequency capacitive silicon resonators; wafer-level encapsulation; Actuators; CMOS process; Electrostatics; Encapsulation; Micromechanical devices; Packaging; Silicon; Thin film sensors; Transducers; Wafer scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2007 IEEE
Conference_Location
Atlanta, GA
ISSN
1930-0395
Print_ISBN
978-1-4244-1261-7
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2007.4388333
Filename
4388333
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