• DocumentCode
    2202642
  • Title

    Wafer-Level Encapsulation and Sealing of Electrostatic HARPSS Transducers

  • Author

    Pourkamali, Siavash ; Ayazi, Farrokh

  • Author_Institution
    Univ. of Denver, Denver
  • fYear
    2007
  • fDate
    28-31 Oct. 2007
  • Firstpage
    49
  • Lastpage
    52
  • Abstract
    This paper reports on a thin-film wafer-level encapsulation technique for packaging and CMOS integration of MEMS sensors and actuators fabricated through the HARPSS process. This approach takes advantage of the stationary parts of the micromechanical device itself for encapsulation of its sensitive moving parts, and therefore can be performed without addition of extensive processing steps. Encapsulated high frequency capacitive silicon resonators are demonstrated using this technique. Reliability and performance tests conducted on the encapsulated resonators reveal a high level of hermeticity and reliability with minimal interference with device operation. This technique can be applied to a wide variety MEMS sensors and actuators. Silicon transducers encapsulated using this approach can run through the regular IC fabrication and/or packaging processes.
  • Keywords
    electrostatic devices; encapsulation; microsensors; wafer level packaging; MEMS sensors; electrostatic HARPSS transducers; encapsulated resonators; high frequency capacitive silicon resonators; wafer-level encapsulation; Actuators; CMOS process; Electrostatics; Encapsulation; Micromechanical devices; Packaging; Silicon; Thin film sensors; Transducers; Wafer scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2007 IEEE
  • Conference_Location
    Atlanta, GA
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-1261-7
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2007.4388333
  • Filename
    4388333