2003 International Symposium on Compound Semiconductors (Cat. No.03TH8675)

fYear

2003

fDate

25-27 Aug. 2003

Abstract

The following topics were dealt: nitride epitaxy and characterization; spintronics; III-V epitaxy and characterisation; nitride electronic devices and doping; dilute nitrides; low-dimensional structure and devices; spintronics; ZnO; nitride optoelectronic devices; nitride HFETs; narrowgap materials and devices; group IV and oxides; HBTs; HFETs and quantum devices; lasers.

Keywords

II-VI semiconductors; III-V semiconductors; MOCVD; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; magnetoelectronics; photodetectors; photoluminescence; photonic crystals; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; silicon compounds; surface emitting lasers; vapour phase epitaxial growth; wide band gap semiconductors; zinc compounds; III-V semiconductor epitaxial properties; SiC compounds; ZnO compounds; compound semiconductors; lasers; low dimensional devices; low dimensional structures; narrowgap devices; narrowgap materials; nitride HFETs; nitride electronic devices; nitride epitaxy properties; optoelectronics; quantum devices; spintronics; Epitaxial growth; Gallium compounds; Heterojunction bipolar transistors; Indium compounds; Integrated optoelectronics; Photodetectors; Photoluminescence; Quantum wells; Semiconductor epitaxial layers; Semiconductor growth; Semiconductor heterojunctions; Silicon compounds; Surface-emitting lasers; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239875

Filename

1239875