Detection of carbon-related bandgap states in GaN using deep level optical spectroscopy

Author

Ringel, S.A. ; Armstrong, A. ; Arehart, A. ; Moran, B. ; Mishra, Umesh K. ; Speck, J.S.

Author_Institution

Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

4

Lastpage

5

Abstract

We present the application of deep level optical spectroscopy (DLOS) to detect carbon-related shallow and deep traps in semi-insulating nitride layers. To charactrise GaN layers with an intentionally wide range of carbon incorporation, were made on atmospheric pressure (AP) and low pressure(LP). Secondary Ion Mass Spectroscopy (SIMS) was used to confirm that LP MOCVD GaN layers incorporated a significantly higher carbon concentration compared to AP MOCVD layers.

Keywords

III-V semiconductors; MOCVD coatings; carbon; deep level transient spectroscopy; deep levels; energy gap; gallium compounds; secondary ion mass spectra; semiconductor epitaxial layers; wide band gap semiconductors; GaN films; GaN:C; MOCVD; SIMS; carbon related bandgap states detection; deep level optical spectroscopy; deep traps; secondary ion mass spectroscopy; semiinsulating properties; Doping; Gallium nitride; HEMTs; MOCVD; Molecular beam epitaxial growth; Optical films; Optical materials; Organic materials; Photonic band gap; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239877

Filename

1239877