Field effect and localization in InGaN/GaN quantum wells

Author

Bell, A. ; Ponce, F.A. ; Marui, H. ; Tanaka, S.

Author_Institution

Dept. of Phys. & Astron., Arizona State Univ., Tempe, AZ, USA

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

6

Lastpage

7

Abstract

In this paper single InGaN quantum wells with GaN barriers were grown by metal organic chemical vapour deposition on sapphire substrates. Time resolved CL measurements performed on single GaN/In_0.13Ga_0.87N/GaN quantum wells with d=6 nm and d=8 nm. Using the onset portion of the time delayed spectra we find that both localisation in potential fluctuations and band tilting due to fields have an effect on the recombination in InGaN/GaN quantum well.

Keywords

III-V semiconductors; MOCVD coatings; cathodoluminescence; electron-hole recombination; gallium compounds; indium compounds; semiconductor quantum wells; time resolved spectra; wide band gap semiconductors; Al₂O₃; GaN barriers; InGaN-GaN; InGaN-GaN quantum wells; band tilting; cathodoluminescence; metal organic chemical vapour deposition; potential fluctuations; recombination; sapphire substrates; time delayed spectra; time resolved CL spectra; Astronomy; Electron beams; Fluctuations; Gallium nitride; Physics; Pulse measurements; Pulse modulation; Radiative recombination; Spectroscopy; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239878

Filename

1239878