Title :
Field effect and localization in InGaN/GaN quantum wells
Author :
Bell, A. ; Ponce, F.A. ; Marui, H. ; Tanaka, S.
Author_Institution :
Dept. of Phys. & Astron., Arizona State Univ., Tempe, AZ, USA
Abstract :
In this paper single InGaN quantum wells with GaN barriers were grown by metal organic chemical vapour deposition on sapphire substrates. Time resolved CL measurements performed on single GaN/In0.13Ga0.87N/GaN quantum wells with d=6 nm and d=8 nm. Using the onset portion of the time delayed spectra we find that both localisation in potential fluctuations and band tilting due to fields have an effect on the recombination in InGaN/GaN quantum well.
Keywords :
III-V semiconductors; MOCVD coatings; cathodoluminescence; electron-hole recombination; gallium compounds; indium compounds; semiconductor quantum wells; time resolved spectra; wide band gap semiconductors; Al2O3; GaN barriers; InGaN-GaN; InGaN-GaN quantum wells; band tilting; cathodoluminescence; metal organic chemical vapour deposition; potential fluctuations; recombination; sapphire substrates; time delayed spectra; time resolved CL spectra; Astronomy; Electron beams; Fluctuations; Gallium nitride; Physics; Pulse measurements; Pulse modulation; Radiative recombination; Spectroscopy; Spontaneous emission;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239878
