DocumentCode :
2202951
Title :
A Novel In-Operation High g-Survivable MEMS Gyroscope
Author :
Azgin, K. ; Temiz, Y. ; Akin, T.
Author_Institution :
Middle East Tech. Univ., Ankara
fYear :
2007
fDate :
28-31 Oct. 2007
Firstpage :
111
Lastpage :
114
Abstract :
This paper presents a new SOI-MEMS gyroscope with very high in-operation shock survivability together with very low R nonlinearity and scale factor g-sensitivity, owing to its optimized mechanical structure and durable readout electronics. Maximum stress induced on the gyro structure under a shock loading of 10,000 g is determined to be below 860 MPa. The new gyroscope also allows keeping the proof mass voltage within the supply voltages of readout electronics, preventing the possibility of electronic failure in case of pull in. The scale factor at the atmospheric pressure is measured as 10.4 mV/(deg/sec) with an R2 nonlinearity of 0.03% and scale-factor g sensitivity of 1.89 (mV/deg/sec)/g. At the atmospheric pressure, the bias instability and angle random walk of the gyroscope are measured as 391deg/hr and 5.27degradichr, respectively. The gyroscope gives even better performance characteristics at vacuum ambient with a bias instability and angle random walk of 105deg/hr and 5.29degradichr, respectively.
Keywords :
gyroscopes; micromechanical devices; silicon-on-insulator; SOI-MEMS gyroscope; in-operation shock survivability; readout electronics; scale factor g-sensitivity; Acceleration; Capacitive sensors; Electric shock; Electrodes; Gyroscopes; Micromechanical devices; Readout electronics; Springs; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2007 IEEE
Conference_Location :
Atlanta, GA
ISSN :
1930-0395
Print_ISBN :
978-1-4244-1261-7
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2007.4388348
Filename :
4388348
Link To Document :
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