Title :
Growth of InN and InGaN on Si substrate for solar cell applications
Author :
Yamaguchi, T. ; Morioka, C. ; Mizuo, K. ; Hori, M. ; Araki, T. ; Suzuki, A. ; Nanishi, Y.
Author_Institution :
Dept. of Photonics, Ritsumeikan Univ., Shiga, Japan
Abstract :
In this paper InN and InGaN films were grown on Si substrates by RF-MBE. Single crystalline InN films were realized on Si by performing brief substrate nitridation for 3 min. The substrate was effective for the growth of InGaN. The peak in PL spectra at 77K for all InN films appeared at only approximately 0.8 eV. We obtained rectifying characteristics in n-InN/P-Si heterostructure. Thus, the possibility as new harmless solar cell application of nitride semiconductors was experimentally demonstrated for the first time.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; molecular beam epitaxial growth; nitridation; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; solar cells; wide band gap semiconductors; 3 min; 77 K; InGaN; InGaN growth; InN; InN band gap energy; InN growth; InN-Si; PL spectra; Si; Si substrate; n InN-P Si heterostructure; nitridation; nitride semiconductors; rf MBE; solar cell; Crystallization; Optical films; Photoluminescence; Photonic band gap; Photovoltaic cells; Radio frequency; Semiconductor films; Semiconductor materials; Substrates; X-ray diffraction;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239880
