X-ray diffraction imaging of wide bandgap materials

Author

Poust, B. ; Feichtinger, P. ; Wojtowicz, M. ; Sandhu, R. ; Heying, B. ; Block, T. ; Khan, A. ; Goorsky, M.

Author_Institution

Dept. of Mater. Sci. & Eng., California Univ., Los Angeles, CA, USA

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

12

Lastpage

13

Abstract

We discuss the interpretation of images of α-SiC substrates and GaN layers deposited on SiC using two common variants of diffraction imaging: double crystal (reflection) topography and Lang (transmission) topography. Dependence of image resolution on layer rocking curve breadth is demonstrated, and implication for limitations imposed by thin and defective layers are discussed.

Keywords

X-ray diffraction; X-ray imaging; X-ray topography; crystal defects; gallium compounds; inclusions; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; GaN; GaN layers; Lang transmission; SiC; SiC substrates; X-ray diffraction imaging; X-ray topography; defective layers; double crystal topography; image resolution; semiconductor materials; wide bandgap materials; Crystalline materials; Gallium nitride; Image resolution; Optical imaging; Photonic band gap; Reflection; Silicon carbide; Surfaces; X-ray diffraction; X-ray imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239881

Filename

1239881