DocumentCode :
2203029
Title :
Optical and electrical manipulation of spin orientation in compound semiconductors
Author :
Flatté, Michael E. ; Lau, Wayne H. ; Pryor, C. ; Tifrea, Ionel
Author_Institution :
Dept. of Phys. & Astron., Iowa Univ., Iowa City, IA, USA
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
16
Lastpage :
17
Abstract :
We describe how optical pulses and gate voltages could be used instead of magnetic fields to orient, manipulate, and decohere spins in compound semiconductors. Device proposals based on these phenomena include the magnetic bipolar transistor.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; electronic density of states; gallium arsenide; indium compounds; magnetic semiconductors; semiconductor quantum dots; semiconductor quantum wells; spin-orbit interactions; GaAs-AlGaAs; InAs; compound semiconductors; electrical properties; gate voltages; magnetic bipolar transistor; magnetic fields; optical properties; optical pulses; spin orientation; Coherence; Electrons; Magnetic fields; Magnetic materials; Nuclear electronics; Optical polarization; Optical pulses; Optical pumping; Proposals; Quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
Type :
conf
DOI :
10.1109/ISCS.2003.1239883
Filename :
1239883
Link To Document :
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