• DocumentCode
    2203151
  • Title

    GaN nano epitaxial lateral overgrowth on holographically patterned

  • Author

    Kim, Dong-Ho ; Kim, Jaehoon ; Cho, Chio ; Jeon, Heonsu

  • Author_Institution
    Sch. of Phys., Seoul Nat. Univ., South Korea
  • fYear
    2003
  • fDate
    25-27 Aug. 2003
  • Firstpage
    27
  • Lastpage
    28
  • Abstract
    We have studied nano-scale GaN epitaxial lateral overgrowth on a SiO2 mask layer containing two-dimensional nano-holes. Under a proper growth condition, we successfully grew a planar GaN film on such a nano-patterned substrate without generating voids.
  • Keywords
    III-V semiconductors; MOCVD; gallium compounds; holography; nanotechnology; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; GaN; SiO2; SiO2 mask layer; holography; nanoscale GaN epitaxial lateral overgrowth; planar GaN film; two-dimensional nanoholes; Chemical lasers; Chemical vapor deposition; Crystalline materials; Gallium nitride; Holography; MOCVD; Organic chemicals; Physics; Semiconductor films; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2003. International Symposium on
  • Print_ISBN
    0-7803-7820-2
  • Type

    conf

  • DOI
    10.1109/ISCS.2003.1239889
  • Filename
    1239889
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2203151