Title :
AlInN as high-index-contrast material for GaN-based optoelectronics
Author :
Carlin, J.-F. ; Dorsaz, I. ; Zellweger, C. ; Gradecak, S. ; Ilegems, M.
Author_Institution :
Inst. of Quantum Electron. & Photonics, Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
High crystalline quality AlInN was grown near lattice-matched to GaN. It shows ≈7% index contrast with GaN. It is thus a promising alternative to AlGaN, as demonstrated by a 20-pairs AlInN/GaN DBR with over 90% reflectivity.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium compounds; indium compounds; integrated optoelectronics; reflectivity; wide band gap semiconductors; AlInN compounds; AlInN-GaN DBR; GaN based optoelectronics; GaN lattice matched; InAlN-GaN; reflectivity; Aluminum gallium nitride; Buffer layers; Crystalline materials; Crystallization; Distributed Bragg reflectors; Gallium nitride; Indium; Lattices; Optical materials; Reflectivity;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239890
