• DocumentCode
    2203173
  • Title

    AlInN as high-index-contrast material for GaN-based optoelectronics

  • Author

    Carlin, J.-F. ; Dorsaz, I. ; Zellweger, C. ; Gradecak, S. ; Ilegems, M.

  • Author_Institution
    Inst. of Quantum Electron. & Photonics, Swiss Fed. Inst. of Technol., Lausanne, Switzerland
  • fYear
    2003
  • fDate
    25-27 Aug. 2003
  • Firstpage
    29
  • Lastpage
    30
  • Abstract
    High crystalline quality AlInN was grown near lattice-matched to GaN. It shows ≈7% index contrast with GaN. It is thus a promising alternative to AlGaN, as demonstrated by a 20-pairs AlInN/GaN DBR with over 90% reflectivity.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium compounds; indium compounds; integrated optoelectronics; reflectivity; wide band gap semiconductors; AlInN compounds; AlInN-GaN DBR; GaN based optoelectronics; GaN lattice matched; InAlN-GaN; reflectivity; Aluminum gallium nitride; Buffer layers; Crystalline materials; Crystallization; Distributed Bragg reflectors; Gallium nitride; Indium; Lattices; Optical materials; Reflectivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2003. International Symposium on
  • Print_ISBN
    0-7803-7820-2
  • Type

    conf

  • DOI
    10.1109/ISCS.2003.1239890
  • Filename
    1239890
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2203173